57modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back( "tbhrec", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Base current recombination time constant at B-C barrier for high forward injection" );
64modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back( "tunode", 131, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Specifies the base node connection for the tunneling current" );
89modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back( "ajei", 156, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::DC, "2.5", "2.5", "Ratio of maximum to zero-bias value of internal B-E capacitance" );
94modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back( "ajep", 160, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::DC, "2.5", "2.5", "Ratio of maximum to zero-bias value of peripheral B-E capacitance" );
122modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back( "ahc", 185, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "0.1", "0.1", "Smoothing factor for current dependence of base and collector transit time" );
139modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back( "alqf", 199, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "s", SIM_MODEL::PARAM::CATEGORY::DC, "0.167", "0.167", "Factor for additional delay time of minority charge" );
140modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back( "alit", 200, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "0.333", "0.333", "Factor for additional delay time of transfer current" );
141modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back( "flnqs", 201, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Flag for turning on and off of vertical NQS effect" );
144modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back( "cfbe", 204, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Flag for determining where to tag the flicker noise source" );
145modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back( "flcono", 205, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Flag for turning on and off of correlated noise implementation" );
166modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back( "zetact", 226, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "3", "3", "Exponent coefficient in transfer current temperature dependence" );
167modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back( "zetabet", 227, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "3.5", "3.5", "Exponent coefficient in B-E junction current temperature dependence" );
169modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back( "dvgbe", 229, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bandgap difference between B and B-E junction used for hjEi0 and hf0" );
222modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back( "rbi", 285, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Internal base resistance as calculated in the model", true );
223modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back( "rb", 286, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Total base resistance as calculated in the model", true );
238modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back( "crbi", 301, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Shunt capacitance across RBI as calculated in the model", true );