KiCad PCB EDA Suite
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sim_model_ngspice_data_hfet.cpp
Go to the documentation of this file.
1
/*
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* This program source code file is part of KiCad, a free EDA CAD application.
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*
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* Copyright (C) 2022 Mikolaj Wielgus
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* Copyright The KiCad Developers, see AUTHORS.TXT for contributors.
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*
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* This program is free software; you can redistribute it and/or
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* modify it under the terms of the GNU General Public License
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* as published by the Free Software Foundation; either version 2
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* of the License, or (at your option) any later version.
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*
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* This program is distributed in the hope that it will be useful,
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* but WITHOUT ANY WARRANTY; without even the implied warranty of
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* MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. See the
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* GNU General Public License for more details.
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*
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* You should have received a copy of the GNU General Public License
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* along with this program; if not, you may find one here:
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* http://www.gnu.org/licenses/old-licenses/gpl-2.0.html
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* or you may search the http://www.gnu.org website for the version 2 license,
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* or you may write to the Free Software Foundation, Inc.,
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* 51 Franklin Street, Fifth Floor, Boston, MA 02110-1301, USA
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*/
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#include <
sim/sim_model_ngspice.h
>
26
27
28
void
NGSPICE_MODEL_INFO_MAP::addHFET
()
29
{
30
modelInfos
[MODEL_TYPE::HFET1] = {
"HFET1"
,
"NMF"
,
"PMF"
, {
"D"
,
"G"
,
"S"
},
"HFET1 Model"
, {}, {} };
31
// Model parameters
32
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"vt0"
, 101,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"V"
, SIM_MODEL::PARAM::CATEGORY::DC,
"Pinch-off voltage"
);
33
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"vto"
, 101,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
"n.a."
);
34
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"lambda"
, 102,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
"Output conductance parameter"
);
35
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"rd"
, 103,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"ohm"
, SIM_MODEL::PARAM::CATEGORY::DC,
"Drain ohmic resistance"
);
36
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"rs"
, 104,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"ohm"
, SIM_MODEL::PARAM::CATEGORY::DC,
"Source ohmic resistance"
);
37
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"rg"
, 105,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"ohm"
, SIM_MODEL::PARAM::CATEGORY::DC,
"Gate ohmic resistance"
);
38
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"rdi"
, 133,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"ohm"
, SIM_MODEL::PARAM::CATEGORY::DC,
"Drain ohmic resistance"
);
39
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"rsi"
, 134,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"ohm"
, SIM_MODEL::PARAM::CATEGORY::DC,
"Source ohmic resistance"
);
40
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"rgs"
, 106,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"ohm"
, SIM_MODEL::PARAM::CATEGORY::DC,
"Gate-source ohmic resistance"
);
41
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"rgd"
, 107,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"ohm"
, SIM_MODEL::PARAM::CATEGORY::DC,
"Gate-drain ohmic resistance"
);
42
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"ri"
, 108,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
43
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"rf"
, 109,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
44
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"eta"
, 110,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
"Subthreshold ideality factor"
);
45
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"m_"
, 111,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
"Knee shape parameter"
);
46
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"mc"
, 112,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
"Knee shape parameter"
);
47
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"gamma"
, 113,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
"Knee shape parameter"
);
48
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"sigma0"
, 114,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"V"
, SIM_MODEL::PARAM::CATEGORY::DC,
"Threshold voltage coefficient"
);
49
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"vsigmat"
, 115,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
50
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"vsigma"
, 116,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
51
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"mu"
, 117,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
"Moblity"
);
52
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"di"
, 118,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
"Depth of device"
);
53
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"delta"
, 119,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
54
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"vs"
, 120,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"m/s"
, SIM_MODEL::PARAM::CATEGORY::DC,
"Saturation velocity"
);
55
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"nmax"
, 121,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
56
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"deltad"
, 122,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"m"
, SIM_MODEL::PARAM::CATEGORY::DC,
"Thickness correction"
);
57
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"js1d"
, 123,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
58
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"js2d"
, 124,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
59
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"js1s"
, 125,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
60
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"js2s"
, 126,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
61
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"m1d"
, 127,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
62
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"m2d"
, 128,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
63
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"m1s"
, 129,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
64
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"m2s"
, 130,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
65
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"epsi"
, 132,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
66
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"p_"
, 138,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
67
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"cm3"
, 152,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
68
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"a1"
, 135,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
69
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"a2"
, 136,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
70
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"mv1"
, 137,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
71
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"kappa"
, 139,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
72
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"delf"
, 140,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
73
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"fgds"
, 141,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
74
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"tf"
, 142,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
75
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"cds"
, 143,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
76
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"phib"
, 144,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
77
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"talpha"
, 145,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
78
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"mt1"
, 146,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
79
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"mt2"
, 147,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
80
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"ck1"
, 148,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
81
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"ck2"
, 149,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
82
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"cm1"
, 150,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
83
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"cm2"
, 151,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
84
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"astar"
, 153,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
85
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"eta1"
, 154,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
86
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"d1"
, 155,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
87
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"vt1"
, 156,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
88
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"eta2"
, 157,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
89
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"d2"
, 158,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
90
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"vt2"
, 159,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
91
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"ggr"
, 160,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
92
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"del"
, 161,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
93
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"gatemod"
, 162,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_INT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
94
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"klambda"
, 163,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
95
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"kmu"
, 164,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
96
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"kvto"
, 165,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
);
97
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"type"
, 168,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_STRING
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
"NHFET or PHFET"
);
98
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"nhfet"
, 166,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_BOOL
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
"N HFET device"
);
99
modelInfos
[MODEL_TYPE::HFET1].modelParams.emplace_back(
"phfet"
, 167,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_BOOL
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
"P HFET device"
);
100
// Instance parameters
101
// FIXME: Default values were lost for some reason, filled them with "".
102
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"off"
, 7,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_BOOL
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Device initially off"
,
true
);
103
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"m"
, 11,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::GEOMETRY,
""
,
""
,
"Parallel Multiplier"
,
true
);
104
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"l"
, 1,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"m"
, SIM_MODEL::PARAM::CATEGORY::GEOMETRY,
""
,
""
,
"Length of device"
,
true
);
105
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"w"
, 2,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"m"
, SIM_MODEL::PARAM::CATEGORY::GEOMETRY,
""
,
""
,
"Width of device"
,
true
);
106
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"icvds"
, 3,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"V"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Initial D-S voltage"
,
true
);
107
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"icvgs"
, 4,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"V"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Initial G-S voltage"
,
true
);
108
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"temp"
, 5,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"°C"
, SIM_MODEL::PARAM::CATEGORY::PRINCIPAL,
""
,
""
,
"Instance temperature"
,
true
);
109
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"dtemp"
, 10,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"°C"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Instance temperature difference"
,
true
);
110
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"dnode"
, 201,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_INT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Number of drain node"
,
true
);
111
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"gnode"
, 202,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_INT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Number of gate node"
,
true
);
112
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"snode"
, 203,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_INT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Number of source node"
,
true
);
113
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"dprimenode"
, 204,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_INT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Number of internal drain node"
,
true
);
114
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"sprimenode"
, 205,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_INT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Number of internal source node"
,
true
);
115
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"vgs"
, 206,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
"V"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Gate-Source voltage"
,
true
);
116
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"vgd"
, 207,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
"V"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Gate-Drain voltage"
,
true
);
117
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"cg"
, 208,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
"F"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Gate capacitance"
,
true
);
118
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"cd"
, 209,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
"F"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Drain capacitance"
,
true
);
119
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"cgd"
, 210,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
"F"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Gate_Drain capacitance"
,
true
);
120
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"gm"
, 211,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Transconductance"
,
true
);
121
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"gds"
, 212,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Drain-Source conductance"
,
true
);
122
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"ggs"
, 213,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Gate-Source conductance"
,
true
);
123
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"ggd"
, 214,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Gate-Drain conductance"
,
true
);
124
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"qgs"
, 215,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Gate-Source charge storage"
,
true
);
125
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"cqgs"
, 216,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
"F"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Capacitance due to gate-source charge storage"
,
true
);
126
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"qgd"
, 217,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Gate-Drain charge storage"
,
true
);
127
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"cqgd"
, 218,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
"F"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Capacitance due to gate-drain charge storage"
,
true
);
128
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"cs"
, 8,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
"A"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Source current"
,
true
);
129
modelInfos
[MODEL_TYPE::HFET1].instanceParams.emplace_back(
"p"
, 9,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Power dissipated by the mesfet"
,
true
);
130
131
132
modelInfos
[MODEL_TYPE::HFET2] = {
"HFET2"
,
"NMF"
,
"PMF"
, {
"D"
,
"G"
,
"S"
},
"HFET2 Model"
, {}, {} };
133
// Model parameters
134
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"type"
, 139,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_STRING
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
"664639780"
,
"-1511458520"
,
"NHFET or PHFET"
);
135
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"nhfet"
, 101,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_BOOL
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"N type HFET model"
);
136
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"phfet"
, 102,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_BOOL
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"P type HFET model"
);
137
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"cf"
, 103,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
138
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"d1"
, 104,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
139
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"d2"
, 105,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
140
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"del"
, 106,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
141
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"delta"
, 107,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
142
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"deltad"
, 108,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"m"
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
"Thickness correction"
);
143
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"di"
, 109,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
"Depth of device"
);
144
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"epsi"
, 110,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
145
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"eta"
, 111,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
"Subthreshold ideality factor"
);
146
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"eta1"
, 112,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
147
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"eta2"
, 113,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
148
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"gamma"
, 114,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
"Knee shape parameter"
);
149
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"ggr"
, 115,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
150
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"js"
, 116,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
151
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"klambda"
, 117,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
152
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"kmu"
, 118,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
153
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"knmax"
, 119,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
154
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"kvto"
, 120,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
155
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"lambda"
, 121,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
"0"
,
"0"
,
"Output conductance parameter"
);
156
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"m_"
, 122,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
"Knee shape parameter"
);
157
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"mc"
, 123,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
"Knee shape parameter"
);
158
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"mu"
, 124,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
"Moblity"
);
159
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"n"
, 125,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
160
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"nmax"
, 126,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
161
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"p_"
, 127,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
162
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"rd"
, 128,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"ohm"
, SIM_MODEL::PARAM::CATEGORY::DC,
"0"
,
"0"
,
"Drain ohmic resistance"
);
163
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"rdi"
, 129,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"ohm"
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
"Drain ohmic resistance"
);
164
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"rs"
, 130,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"ohm"
, SIM_MODEL::PARAM::CATEGORY::DC,
"0"
,
"0"
,
"Source ohmic resistance"
);
165
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"rsi"
, 131,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"ohm"
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
"Source ohmic resistance"
);
166
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"sigma0"
, 132,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
"DIBL parameter"
);
167
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"vs"
, 133,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"m/s"
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
"Saturation velocity"
);
168
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"vsigma"
, 134,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
169
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"vsigmat"
, 135,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
170
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"vt0"
, 138,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"V"
, SIM_MODEL::PARAM::CATEGORY::DC,
"-2"
,
"-2"
,
"Pinch-off voltage"
);
171
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"vto"
, 138,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
"-2"
,
"-2"
,
"n.a."
);
172
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"vt1"
, 136,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
173
modelInfos
[MODEL_TYPE::HFET2].modelParams.emplace_back(
"vt2"
, 137,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::DC,
""
,
""
,
""
);
174
// Instance parameters
175
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"off"
, 6,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_BOOL
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Device initialli OFF"
,
true
);
176
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"m"
, 11,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::GEOMETRY,
""
,
""
,
"Parallel Multiplier"
,
true
);
177
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"l"
, 1,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"m"
, SIM_MODEL::PARAM::CATEGORY::GEOMETRY,
""
,
""
,
"Length of device"
,
true
);
178
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"w"
, 2,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"m"
, SIM_MODEL::PARAM::CATEGORY::GEOMETRY,
""
,
""
,
"Width of device"
,
true
);
179
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"icvds"
, 3,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"V"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Initial D-S voltage"
,
true
);
180
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"icvgs"
, 4,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"V"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Initial G-S voltage"
,
true
);
181
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"temp"
, 9,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"°C"
, SIM_MODEL::PARAM::CATEGORY::PRINCIPAL,
""
,
""
,
"Instance temperature"
,
true
);
182
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"dtemp"
, 10,
SIM_MODEL::PARAM::DIR_INOUT
,
SIM_VALUE::TYPE_FLOAT
,
"°C"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Instance temperature difference"
,
true
);
183
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"dnode"
, 201,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_INT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Number of drain node"
,
true
);
184
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"gnode"
, 202,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_INT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Number of gate node"
,
true
);
185
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"snode"
, 203,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_INT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Number of source node"
,
true
);
186
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"dprimenode"
, 204,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_INT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Number of internal drain node"
,
true
);
187
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"sprimenode"
, 205,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_INT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Number of internal source node"
,
true
);
188
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"vgs"
, 206,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
"V"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Gate-Source voltage"
,
true
);
189
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"vgd"
, 207,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
"V"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Gate-Drain voltage"
,
true
);
190
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"cg"
, 208,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
"F"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Gate capacitance"
,
true
);
191
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"cd"
, 209,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
"F"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Drain capacitance"
,
true
);
192
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"cgd"
, 210,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
"F"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
"0"
,
"0"
,
"Gate_Drain capacitance"
,
true
);
193
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"gm"
, 211,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Transconductance"
,
true
);
194
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"gds"
, 212,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Drain-Source conductance"
,
true
);
195
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"ggs"
, 213,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Gate-Source conductance"
,
true
);
196
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"ggd"
, 214,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Gate-Drain conductance"
,
true
);
197
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"qgs"
, 215,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Gate-Source charge storage"
,
true
);
198
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"cqgs"
, 216,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
"F"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Capacitance due to gate-source charge storage"
,
true
);
199
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"qgd"
, 217,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Gate-Drain charge storage"
,
true
);
200
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"cqgd"
, 218,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
"F"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Capacitance due to gate-drain charge storage"
,
true
);
201
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"cs"
, 7,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
"A"
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Source current"
,
true
);
202
modelInfos
[MODEL_TYPE::HFET2].instanceParams.emplace_back(
"p"
, 8,
SIM_MODEL::PARAM::DIR_OUT
,
SIM_VALUE::TYPE_FLOAT
,
""
, SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,
""
,
""
,
"Power dissipated by the mesfet"
,
true
);
203
}
SIM_VALUE::TYPE_BOOL
@ TYPE_BOOL
Definition
sim_value.h:67
SIM_VALUE::TYPE_INT
@ TYPE_INT
Definition
sim_value.h:68
SIM_VALUE::TYPE_FLOAT
@ TYPE_FLOAT
Definition
sim_value.h:69
SIM_VALUE::TYPE_STRING
@ TYPE_STRING
Definition
sim_value.h:71
sim_model_ngspice.h
NGSPICE_MODEL_INFO_MAP::modelInfos
std::unordered_map< MODEL_TYPE, MODEL_INFO > modelInfos
Definition
sim_model_ngspice.h:123
NGSPICE_MODEL_INFO_MAP::addHFET
void addHFET()
Definition
sim_model_ngspice_data_hfet.cpp:28
SIM_MODEL::PARAM::DIR_OUT
@ DIR_OUT
Definition
sim_model.h:320
SIM_MODEL::PARAM::DIR_INOUT
@ DIR_INOUT
Definition
sim_model.h:321
src
eeschema
sim
sim_model_ngspice_data_hfet.cpp
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